Ultralow-power field-free magnetization switching via oxide interfacial Quasi-two-dimensional electron gas
Abstract
The practical implementation of spin-orbit torque (SOT) technologies requires efficient spin source that enables field-free switching of perpendicular magnetization with minimal power consumption. Here, we demonstrate that a symmetry-breaking oxide interface Quasi-two-dimensional electron gas (Q-2DEG), created by argon ion bombardment of miscut SrTiO3 (001), can serve as such a high-performance spin source. The surface Q-2DEG exhibit good ohmic contact with the ferromagnetic metal, thereby allowing the miscut Q-2DEG spin source to fully realize its advantages of high charge-spin conversion efficiency and intrinsic symmetry breaking. Along the low-symmetry direction of the miscut oxide surface, the Q-2DEG exhibits both large anomalous spin polarization and conventional spin polarization, with an anomalous spin polarization angle as high as 14.57°. In miscut Q-2DEG/CoGd heterostructures, we achieve deterministic field-free switching with an ultralow critical current density of 8.1 × 104 A·cm-2 and the power dissipation density of 7 × 1012 W·m-3. This miscut surface oxide Q-2DEG capitalizes on strong Rashba spin-orbit coupling and symmetry engineering, establishing a foundation for integrable, low-power spin logic and memory technologies.
Citation Information
@article{kaiyouwang2026,
title={Ultralow-power field-free magnetization switching via oxide interfacial Quasi-two-dimensional electron gas},
author={Kaiyou Wang and Yongcheng Deng and Zhaoqing li and Hui Wen and Qilin Guan and Qiyuan Feng and Chuanying Xi and Xionghua Liu and Xuan Qian and Wenkai Zhu and Li Pi and Ding-Fu Shao and Zhe Yuan},
journal={Nature Portfolio},
year={2026},
doi={https://doi.org/10.21203/rs.3.rs-9456420/v1}
}
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