Physical Sciences - Article 2026-04-22 under-review v1

Ultralow-power field-free magnetization switching via oxide interfacial Quasi-two-dimensional electron gas

K
Kaiyou Wang Institute of Semiconductors, Chinese Academy of Sciences
Y
Yongcheng Deng Institute of Semiconductors, Chinese Academy of Sciences
Z
Zhaoqing li State Key Laboratory of Surface Physics and Interdisciplinary Center for Theoretical Physics and Information Sciences, Fudan University
H
Hui Wen State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
Q
Qilin Guan State Key Laboratory of Surface Physics and Interdisciplinary Center for Theoretical Physics and Information Sciences, Fudan University
Q
Qiyuan Feng High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences
C
Chuanying Xi Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Anhui, Chinese Academy of Sciences, Hefei 230031, P. R. China
X
Xionghua Liu Institute of Semiconductors, Chinese Academy of Sciences
X
Xuan Qian Institution of Semiconductors, CAS
W
Wenkai Zhu Institute of Semiconductors, Chinese Academy of Sciences
L
Li Pi Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences
D
Ding-Fu Shao Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences
Z
Zhe Yuan Fudan University

Abstract

The practical implementation of spin-orbit torque (SOT) technologies requires efficient spin source that enables field-free switching of perpendicular magnetization with minimal power consumption. Here, we demonstrate that a symmetry-breaking oxide interface Quasi-two-dimensional electron gas (Q-2DEG), created by argon ion bombardment of miscut SrTiO3 (001), can serve as such a high-performance spin source. The surface Q-2DEG exhibit good ohmic contact with the ferromagnetic metal, thereby allowing the miscut Q-2DEG spin source to fully realize its advantages of high charge-spin conversion efficiency and intrinsic symmetry breaking. Along the low-symmetry direction of the miscut oxide surface, the Q-2DEG exhibits both large anomalous spin polarization and conventional spin polarization, with an anomalous spin polarization angle as high as 14.57°. In miscut Q-2DEG/CoGd heterostructures, we achieve deterministic field-free switching with an ultralow critical current density of 8.1 × 104 A·cm-2 and the power dissipation density of 7 × 1012 W·m-3. This miscut surface oxide Q-2DEG capitalizes on strong Rashba spin-orbit coupling and symmetry engineering, establishing a foundation for integrable, low-power spin logic and memory technologies.

Citation Information

@article{kaiyouwang2026,
  title={Ultralow-power field-free magnetization switching via oxide interfacial Quasi-two-dimensional electron gas},
  author={Kaiyou Wang and Yongcheng Deng and Zhaoqing li and Hui Wen and Qilin Guan and Qiyuan Feng and Chuanying Xi and Xionghua Liu and Xuan Qian and Wenkai Zhu and Li Pi and Ding-Fu Shao and Zhe Yuan},
  journal={Nature Portfolio},
  year={2026},
  doi={https://doi.org/10.21203/rs.3.rs-9456420/v1}
}
Back to Top
Home
Paper List
Submit
0.018685s