2 results found

Md. Mamunur Rahman, Ensar Vahapoglu, Kok Wai Chan, Tuomo Tanttu, Ajit Dash, Jonathan Yue Huang, Steve Yianni, Venkatesh Chenniappan, Jesús D. Cifuentes, Fay Hudson, Christopher C. Escott, Yik Kheng Lee, Nard Dumoulin Stuyck, Arne Laucht, Andrea Morello, Andre Saraiva, Jared H Cole, Andrew S. Dzurak, Wee Han Lim

We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal–oxide–semiconductor (SiMOS) quantum devices. By combining ...

npj Quantum Materials 2026-04-23 rs-9297493
Atomic Layer Deposition Charge Noise Dingle Ratio Hall-bar High-κ Peak Mobility Quantum Dot Stability Map

D. A. M. Abo-Kahla, M. E. Shaheen

The analytical solution of the system consisting of donor-acceptor double quantum dots of approximately the same size, located inside a high-quality cavity is studied. The double quantum dots interact...

Journal of Computational Electronics 2026-04-21 rs-8910531
Förster interaction Quantum Tunneling Current Donor-Acceptor Quantum Dots Entropy Fisher Information
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